200A 1200V IGBT MODULE

About 200A 1200V IGBT MODULE

STARPOWER GD200HFY120C2S IGBT Module

Product Overview

The STARPOWER GD200HFY120C2S is a high-performance, dual N-channel (half-bridge configuration) Insulated Gate Bipolar Transistor (IGBT) power module. Utilizing advanced Trench Field Stop IGBT technology, it delivers exceptionally low conduction losses and robust short-circuit ruggedness. The module is housed in an industry-standard low-inductance case with an isolated copper baseplate utilizing DBC (Direct Bonded Copper) technology for optimized thermal management.

Key Features

• High Efficiency: Low saturation voltage ($V_{CE(sat)}$) with a positive temperature coefficient.

• Integrated Protection: Features 10s short-circuit capability and high maximum junction temperature handling up to 175C.

• Optimized Performance: Equipped with fast and soft reverse recovery anti-parallel Free-Wheeling Diodes (FWD).

• Secure Mounting: Designed with reliable, heavy-duty M6 screw/stud terminals for rugged panel-mount power connections.

Technical Specifications

• Manufacturer: STARPOWER Semiconductor

• Part Number: GD200HFY120C2S

• Configuration: Dual / Half-Bridge

• Package Type: Industry Standard C2 Module (Panel Mount)

Target Applications

• General AC inverter and motor control drives

• Uninterruptible Power Supplies (UPS)

• Industrial motion and servo control systems